| PART |
Description |
Maker |
| XTSC0402-470PF |
Extreme Temperature Silicon Capacitor
|
Micross Components
|
| XTSC0402-1NF |
Extreme Temperature Silicon Capacitor
|
Micross Components
|
| KTY81 KTY81_110 KTY81_120 KTY81_121 KTY81_122 KTY8 |
TEMPERATURE SENSOR, PBCY2
KTY81 series Silicon temperature sensors
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NXP Semiconductors
|
| MPXV6115VC6U |
High Temperature Accuracy Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated
From old datasheet system
|
Motorola
|
| BYP25A1 BYP25K05 BYP25A05 BYP25A2 BYP25A3 BYP25A4 |
Silicon Press-Fit-Diodes High-temperature diodes 25 A, 300 V, SILICON, RECTIFIER DIODE
VGA VIDEO CABLE 100 FT MM 25 A, 100 V, SILICON, RECTIFIER DIODE
Silicon Press-Fit-Diodes High-temperature diodes 25 A, 600 V, SILICON, RECTIFIER DIODE
Silicon Press-Fit-Diodes High-temperature diodes 25 A, 400 V, SILICON, RECTIFIER DIODE
|
Diotec Semiconductor AG
Diotec Elektronische
|
| BZG03_3 BZG03-C20T/R BZG03-C91/T3 BZG03-C91T/R BZG |
36 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC
Micropower Step Up/Down Switching Regulator; Adjustable and Fixed 3.3 V, 5 V, 12 V; Package: SOIC; No of Pins: 8; Temperature Range: Commercial 240 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC
Micropower Step Up/Down Switching Regulator; Adjustable and Fixed 3.3 V, 5 V, 12 V; Package: SOIC; No of Pins: 8; Temperature Range: Commercial 24 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC
Voltage regulator diodes 47 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC
51 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC PLASTIC PACKAGE-2
Micropower Step Up/Down Switching Regulator; Adjustable and Fixed 3.3 V, 5 V, 12 V; Package: SOIC; No of Pins: 8; Temperature Range: Commercial 22 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC
Micropower Step Up/Down Switching Regulator; Adjustable and Fixed 3.3 V, 5 V, 12 V; Package: SOIC; No of Pins: 8; Temperature Range: Commercial 51 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC
22 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC PLASTIC PACKAGE-2
220 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC PLASTIC PACKAGE-2
Micropower Step Up/Down Switching Regulator; Adjustable and Fixed 3.3 V, 5 V, 12 V; Package: SOIC; No of Pins: 8; Temperature Range: Commercial 220 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC
10 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC PLASTIC PACKAGE-2
Micropower Step Up/Down Switching Regulator; Adjustable and Fixed 3.3 V, 5 V, 12 V; Package: PDIP; No of Pins: 8; Temperature Range: Commercial 180 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC
Voltage regulator diodes 110 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC
PWM, Step-Down DC-to-DC Controller with Margining and Tracking; Package: QSOP; No of Pins: 24; Temperature Range: Industrial 120 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC
PWM, Step-Down DC-to-DC Controller with Margining and Tracking; Package: None Available; No of Pins: 24; Temperature Range: Industrial 12 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC
11 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC PLASTIC PACKAGE-2
16 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC PLASTIC PACKAGE-2
Micropower Step Up/Down Switching Regulator; Adjustable and Fixed 3.3 V, 5 V, 12 V; Package: PDIP; No of Pins: 8; Temperature Range: Commercial 18 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC
15 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC PLASTIC PACKAGE-2
12 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC PLASTIC PACKAGE-2
Micropower Step Up/Down Switching Regulator; Adjustable and Fixed 3.3 V, 5 V, 12 V; Package: PDIP; No of Pins: 8; Temperature Range: Commercial 15 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC
1 Amp Synchronous, Step-Down DC-to-DC Converter; Package: LFCSP (4x4x.85mm, 2.10mm exposed pad); No of Pins: 16; Temperature Range: Industrial 75 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC
75 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC PLASTIC PACKAGE-2
Micropower Step Up/Down Switching Regulator; Adjustable and Fixed 3.3 V, 5 V, 12 V; Package: SOIC; No of Pins: 8; Temperature Range: Commercial 27 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC
27 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC PLASTIC PACKAGE-2
270 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC PLASTIC PACKAGE-2
91 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC PLASTIC PACKAGE-2
From old datasheet system
|
NXP Semiconductors N.V.
|
| MPXM2202 MPXM2202A MPXM2202AS MPXM2202AST1 MPXM220 |
200kPa On-Chip Temperature Compensated & Calibrated Silicon Pressure Sensors(200kPa片内温度补偿和校准硅压力传感
200 KPA ON CHIP TEMPERATURE COMPENSATED & CALIBRATED SILICON PRESSURE SENSORS
|
Motorola, Inc.
飞思卡尔半导体(中国)有限公司
MOTOROLA[Motorola, Inc]
|
| JANTXV1N827ATR-2 JANS1N827ATR-2 JANTXV1N827TR-2 JA |
6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated 6.2 V, SILICON, VOLTAGE REFERENCE DIODE, DO-204AH
6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated 6.2 V, SILICON, VOLTAGE REFERENCE DIODE, DO-213AA
|
Microsemi, Corp.
Microsemi Corporation
|
| BZG01 BZG01-C10 BZG01-C100 BZG01-C110 BZG01-C12 BZ |
SMA voltage regulator diodes 200 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC
SMA voltage regulator diodes 43 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC
SMA voltage regulator diodes 62 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC
SMA voltage regulator diodes 220 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC
Supervisory Circuit with Watchdog and Manual Reset in 5-Lead SC70 and SOT-23; Package: SC70; No of Pins: 5; Temperature Range: Industrial 22 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC
SMA voltage regulator diodes 10 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC
SMA voltage regulator diodes 51 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC
SMA voltage regulator diodes 12 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC
SMA voltage regulator diodes 120 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC
SMA voltage regulator diodes 56 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC
SMA voltage regulator diodes 15 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC
SMA voltage regulator diodes 27 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC
CMOS Switched-Capacitor Voltage Converter; Package: TSSOP; No of Pins: 16; Temperature Range: Industrial 91 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC
CMOS Switched-Capacitor Voltage Converter; Package: SOIC; No of Pins: 8; Temperature Range: Industrial
µP Supervisory Circuit with Watchdog Feature, 4.65V Threshold Voltage, Low Supply Current and Active Low Reset Output. Upgrade for ADM699; Package: SOIC; No of Pins: 8; Temperature Range: Industrial
|
Kingbright, Corp.
Power-One, Inc.
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
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CREE POWER
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